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| inchange semiconductor product specification silicon npn power transistors 2SD425 2sd426 description ? with to-3 package ? complement to type 2sb555/556 ? high power dissipation applications ? power amplifier applications ? recommended for high-power high-fidelity audio frequency amplifier output stage pinning(see fig.2) pin description 1 base 2 emitter 3 collector absolute maximum ratings(ta= ?? ) symbol parameter conditions value unit 2SD425 140 v cbo collector-base voltage 2sd426 open emitter 120 v 2SD425 140 v ceo collector-emitter voltage 2sd426 open base 120 v v ebo emitter-base voltage open collector 5 v i c collector current 12 a i e emitter current 12 a p c collector power dissipation t c =25 ?? 100 w t j junction temperature 150 ?? t stg storage temperature -65~150 ?? fig.1 simplified outline (to-3) and symbol
inchange semiconductor product specification 2 silicon npn power transistors 2SD425 2sd426 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit 2SD425 140 v (br)ceo collector-emitter breakdown voltage 2sd426 i c =0.1a ;i b =0 120 v v (br)ebo emitter-base breakdown voltage i e =10ma ;i c =0 5 v 2SD425 i c =7a; i b =0.7a v cesat collector-emitter saturation voltage 2sd426 i c =6a; i b =0.6a 3.0 v v be base-emitter on voltage i c =7a ; v ce =5v 2.5 v i cbo collector cut-off current v cb =50v; i e =0 0.1 ma i ebo emitter cut-off current v eb =5v; i c =0 0.1 ma h fe dc current gain i c =2a ; v ce =5v 40 140 f t transition frequency i c =2a ; v ce =5v 5 mhz inchange semiconductor product specification 3 silicon npn power transistors 2SD425 2sd426 package outline fig.2 outline dimensions (unindicated tolerance: ? 0.1mm) |
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